Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

• Tairzhan Karabassov,
• Valeriia D. Pashkovskaia,
• Nikita A. Parkhomenko,
• Anastasia V. Guravova,
• Elena A. Kazakova,
• Boris G. Lvov,
• Alexander A. Golubov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

• . To complete the boundary problem, we also set a boundary condition at x = +∞: where the Green’s functions take the well-known bulk BCS form. The Green’s function method allows us to compute the DOS at the outer F boundary by solving the resulting system of equations above. The DOS at the outer F

Robust midgap states in band-inverted junctions under electric and magnetic fields

• Álvaro Díaz-Fernández,
• Natalia del Valle and
• Francisco Domínguez-Adame

Beilstein J. Nanotechnol. 2018, 9, 1405–1413, doi:10.3762/bjnano.9.133

• equation by introducing a unitary matrix U such that . Doing so and defining and we obtain In order to solve Equation 8 we shall use the Green’s function method. The solution to Equation 8 will be given by where the retarded Green’s function G(s,s′) satisfies and G(s,s′)→0 as |s|,|s|′→∞. Note that G(s,s

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

• Jun-Tong Ren,
• Hai-Feng Lü,
• Sha-Sha Ke,
• Yong Guo and
• Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

• with Majorana bound states (MBSs). The conductance and the noise Fano factor are calculated based on a tight-binding model by adopting a non-equilibrium Green’s function method. It is found that the disorder can effectively lead to a reduction in the conductance peak spacings and significantly suppress

Thermoelectric current in topological insulator nanowires with impurities

• Sigurdur I. Erlingsson,
• Jens H. Bardarson and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1156–1161, doi:10.3762/bjnano.9.107

• (Figure 1a). For a non-zero magnetic field we use a = 0.01 R, because more states contribute to the flat bands at E = 0. At this point we are free to use standard discretization schemes and the transmission function in the case when impurities are included is obtained using the recursive Green’s function

• method [39]. Experiments on normal (not topological) nanowires show a conductance that can be complicated, but reproducible trace for a given nanowire. This means that the measurement can be repeated on the same nanowire and it will give the same conductance trace as long as the sample is kept under

Towards molecular spintronics

• Georgeta Salvan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2017, 8, 2464–2466, doi:10.3762/bjnano.8.245

• Georgeta Salvan Dietrich R. T. Zahn Physics Department, Semiconductor Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany 10.3762/bjnano.8.245 Keywords: density functional theory; electrical and spin transport; Green’s function method; interfaces; magnetic

Spin-dependent transport and functional design in organic ferromagnetic devices

• Guichao Hu,
• Shijie Xie,
• Chuankui Wang and
• Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

• first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice

• through OF devices, which combines the extended Su–Schrieffer–Heeger (SSH) model [30] and the Green’s function method. The two interactions mentioned above are included. Then, we review results on electron transport and functional design of organic ferromagnetic devices, which are based on this theory. We

• focus on three concepts that are interesting for spintronics, namely spin filtering [31], multi-state magnetoresistance [32], and spin–current rectification [33]. Review SSH model combined with the Green’s function method Generally, an OF device may be constructed by sandwiching the OF molecule between

Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1413–1420, doi:10.3762/bjnano.6.146

• graphene electrodes (EBG) using the nonequilibrium Green’s function method and density functional theory. The porphyrin-based molecule is bound to the EBG electrodes by planar aromatic anchor groups. Due to the efficient π–π overlap between the anchor groups and graphene and the location of frontier

• gating as a result of the reduced screening. Here, we study the charge and thermal transport characteristics through a porphyrin single-molecule transistor with electro-burnt graphene electrodes using the nonequilibrium Green’s function method and density functional theory. First we discuss the

• Monkhorst–Pack k-point grid. Transport calculation: In a similar manner as described in [26][27], the mean-field Hamiltonian obtained from the converged DFT calculation or a simple tight-binding Hamiltonian was combined with our implementation of the nonequilibrium Green’s function method, the GOLLUM [28

Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• the method of Botello-Mendez et al. [37], calculated using a recursive Green’s Function method [55][56], the Kubo formula for conductance [57] and a configurational average of 50 systems. Energy is in units of the tight binding nearest neighbour hopping energy between carbon atoms, t = 2.7 eV. Shown

Many-body effects in semiconducting single-wall silicon nanotubes

• Wei Wei and
• Timo Jacob

Beilstein J. Nanotechnol. 2014, 5, 19–25, doi:10.3762/bjnano.5.2

• Wei Wei Timo Jacob Institute of Electrochemistry, Ulm University, Albert-Einstein-Allee 47, D-89081 Ulm, Germany 10.3762/bjnano.5.2 Abstract The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green’s function method, i.e., GW